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| Home > Science Articles > Peer Reviewed Articles > TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping |
| Home > Science Articles > Peer Reviewed Articles > TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping |
Soltani, A. ; Rousseau, M ; Gerbedoen, J-C ; Bourzgui, N. ; Mattalah, M. ; Ougazzaden, A. ; Patriarche, G. ; Telia, A. ; BenMoussa, A.
published in Applied Physics Letters, 104, pp. 233506 (2014)
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The record appears in these collections:
Royal Observatory of Belgium > Solar Physics & Space Weather (SIDC)
Science Articles > Peer Reviewed Articles
Solar-Terrestrial Centre of Excellence