000000526 001__ 526
000000526 005__ 20160222141717.0
000000526 037__ $$aSIDCimport-606
000000526 100__ $$aSoltani, A.
000000526 245__ $$aTiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping
000000526 260__ $$c2014
000000526 594__ $$aSTCE
000000526 700__ $$aRousseau, M
000000526 700__ $$aGerbedoen, J-C
000000526 700__ $$aBourzgui, N.
000000526 700__ $$aMattalah, M.
000000526 700__ $$aOugazzaden, A.
000000526 700__ $$aPatriarche, G.
000000526 700__ $$aTelia, A.
000000526 700__ $$aBenMoussa, A.
000000526 773__ $$c233506$$pApplied Physics Letters$$v104$$y2014
000000526 85642 $$ahttp://scitation.aip.org/content/aip/journal/apl/104/23/10.1063/1.4882415
000000526 905__ $$apublished in
000000526 980__ $$aREFERD