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Science Article (Ref.) 
TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping / Soltani, A. ; Rousseau, M ; Gerbedoen, J-C ; Bourzgui, N. ; et al
published in Applied Physics Letters, 104, pp. 233506 (2014) [SIDCimport-606]

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